NXP Semiconductors is collaborating with Hitachi Energy to accelerate the adoption of silicon carbide (SiC) power semiconductor modules in e-mobility. The project aims to provide more efficient, reliable, and functionally safe SiC MOSFET-based solutions for powertrain inverters comprised of NXP’s advanced, high-performance GD3160 isolated HV Gate Drivers and Hitachi Energy’s RoadPak automotive SiC MOSFET power modules.
Compared to traditional silicon IGBTs, SiC MOSFET power devices offer electric vehicle (EV) makers the ability to increase the range and overall efficiency of their systems. SiC MOSFET power devices, enabled by high-performance power semiconductor modules and isolated gate drivers, offer faster switching speeds, lower turn-on resistance and reduced thermal dissipation that can help drive down the size and cost of an EV’s powertrain inverter and lower the required capacity of the battery pack, extending the vehicle’s range.
Hitachi Energy’s high-performance automotive power semiconductor module RoadPak delivers excellent heat dissipation, low stray inductances, and long-term ruggedness to withstand the challenging automotive environment; a key to unleashing the full capabilities and benefits of SiC MOSFETs. To attain optimal performance, the power module is paired with NXP’s GD3160 high-voltage, isolated gate driver which enables fast and reliable switching and fault protection.
Hitachi Energy has been leveraging its technology and the experience gained in the industrial and transportation segments to develop its high-density RoadPak automotive SiC power modules for e-mobility applications. The RoadPak half-bridge power module incorporates 1200V SiC MOSFETs, integrated cooling pin-fins and low inductance connections all in a small form factor. It can support applications from e-buses and electric passenger vehicles to high-performance Formula-E race cars.
The FRDMGD31RPEVM, the GD3160 half-bridge EVB customized for the RoadPak SiC module is available now. The Hitachi Energy’s 1200V RoadPak half-bridge SiC module is available now in 580A, 780A, and 980A options.
Features:
- An advanced single channel high-voltage isolated gate driver with enhanced features for driving silicon carbide (SiC) MOSFETs devices rated to 1700 V.
- Incorporates ±15 A of gate current drive capability.
- Fast DeSat block which can detect and react against short-circuit (SC) events in SiC MOSFETS in less than 1 µs.
- Implements segmented drive for higher efficiency and better VDS over-shoot protection at a lower BOM cost than other traditional methods.
- SPI Programmable drive, protection, and fault reporting features such as 2LTO, Soft Shutdown (SSD), DeSat Threshold, and OTW.
- Includes additional protection, such as integrated power device temp sensing and functional safety features such as analog BIST, communication WatchDog, and SPI with CRC to facilitate implementation of traction inverter systems meeting the requirements of ASIL-C or ASIL-D functional safety.